công cụ tìm kiếm bảng dữ liệu linh kiện điện tử
  Vietnamese  ▼
ALLDATASHEET.VN

X  

AN4191 bảng dữ liệu(PDF) 14 Page - STMicroelectronics

tên linh kiện AN4191
Giải thích chi tiết về linh kiện  This report shows the analysis performed on Power MOSFET devices
PDF  20 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN4191 bảng dữ liệu(HTML) 14 Page - STMicroelectronics

Back Button AN4191 Datasheet HTML 10Page - STMicroelectronics AN4191 Datasheet HTML 11Page - STMicroelectronics AN4191 Datasheet HTML 12Page - STMicroelectronics AN4191 Datasheet HTML 13Page - STMicroelectronics AN4191 Datasheet HTML 14Page - STMicroelectronics AN4191 Datasheet HTML 15Page - STMicroelectronics AN4191 Datasheet HTML 16Page - STMicroelectronics AN4191 Datasheet HTML 17Page - STMicroelectronics AN4191 Datasheet HTML 18Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 14 / 20 page
background image
Rg impact for MOSFETs in buck/buck-boost configurations
AN4191
14/20
Doc ID 023815 Rev 1
3.2
Synchronous buck converter for motherboard: LS false turn-
on risk enhancement
In Figure 16, the schematic of a single-phase synchronous buck converter is shown
(VIN = 12 V, VOUT = 1.5 V, fSW = 500 kHz, IOUT,MAX = 30 A); Q4-6 is the high-side device,
while Q1-3 is the low-side FET.
Figure 16.
Schematic of a single-phase synchronous buck converter
The LS device can be affected by the so-called “LS false turn-on,” which can be potentially
dangerous for the MOSFET itself and the reliability of the entire converter. When the high-
side turns on, a high dV/dt appears across the low-side device (Figure 17). Through the
Miller capacitance, a capacitive current flows (ic = Cgd * dV/dt), coupling to the LS gate pin.
If the total resistance formed by the intrinsic, external, and driver resistances is much lower
than the equivalent MOSFET impedance between gate and source, this current flows
through the above mentioned resistive path. This causes a spurious bouncing across gate
and source MOSFET pins; if this induced voltage is higher than minimum threshold voltage,
the LS can be partially turned on, creating a low-resistance path between supply voltage
and GND. In other words, undesired power dissipation is present in each switching cycle,
worsening the converter efficiency, thermal management, and reliability.
Figure 17.
Cdv/dt false turn-on event
AM16423V1
AM16424V1



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20


bảng dữ liệu tải về

Go To PDF Page


Link URL



Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không?  [ DONATE ] 

Alldatasheet là   |   Quảng cáo   |   Liên lạc với chúng tôi   |   Chính sách bảo mật   |   Liên kết đến bảng dữ liệu    |   Trao đổi link   |   Tìm kiếm theo nhà sản xuất
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com