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AN2782 bảng dữ liệu(PDF) 18 Page - STMicroelectronics |
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AN2782 bảng dữ liệu(HTML) 18 Page - STMicroelectronics |
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18 / 39 page ![]() Designing a fixed off-time PFC AN2782 18/39 Doc ID 14763 Rev 2 Figure 10. Conduction losses and total losses in the two STP12NM50 MOSFETs for the 400 W FOT PFC Figure 10 shows the trend of the total losses (48) on the line voltage for the two selected STP12NM50 MOSFETs. 4.3.6 Boost diode selection Following a similar criterion as that for the MOSFET, the output rectifier can also be selected. A minimum breakdown voltage of 1.2·(Vout + ΔOVP) and a current rating higher than 3·Iout (21) can be chosen for a rough initial selection of the rectifier. The correct choice is then confirmed by the thermal calculation. If the diode junction temperature works within 125 °C the device has been selected correctly, otherwise a bigger device must be selected. The switching losses can be significantly reduced if an ultra-fast diode is employed. Since this circuit operates in the continuous current mode, the MOSFET has to recover the boost diode minority carrier charge at turn-on. Thus, a diode with a small reverse recovery time, trr, must be used. In this 400 W application an STTH8R06, (600 V, 8 A) has been selected. The STTH8R06 offers the best solution for the continuous current mode operation due to its very fast reverse recovery time, 25 ns typical. This part has a breakdown voltage rating (Vrrm) of 600 V, average forward current rating (Ifave) of 8 A and reverse recovery time (trr) of 25 ns. The rectifier AVG (21) and RMS (30) current values and the parameter Vth (rectifier threshold voltage) and Rd (dynamic resistance) given in the datasheet allow calculating the rectifier losses. From the STTH8R06 datasheet, Vth is 1.16 V, Rd is 0.08 Ω, neglecting the recovery losses: MOSFETS total losses 0 5 10 15 90 115 140 165 190 215 240 265 Vac (V) Pcond(Vi) Plosses(Vi) (50) rms 2 d out th diode ID R I V P ⋅ + ⋅ = ( ) W 69 . 1 A 56 . 2 08 . 0 A 0 . 1 V 16 . 1 P 2 diode = ⋅ Ω + ⋅ = |
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