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AN1882 bảng dữ liệu(PDF) 19 Page - STMicroelectronics

tên linh kiện AN1882
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AN1882 bảng dữ liệu(HTML) 19 Page - STMicroelectronics

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AN1882
Application information
Doc ID 10209 Rev 4
19/30
Equation 18
where RP and RN are the series resistance of the high side and low side MOSFETs
respectively and RL the series resistance of the inductor. The conduction losses due to the
ESR of the input and output capacitors are usually negligible, particularly when using
ceramic caps (very low ESR). Anyway, in case of high ESR values for these caps, their
conduction losses are:
Equation 19
where
ΔI is the current ripple flowing through the choke and D is the duty cycle of the
application. The conduction losses are particularly important at high current cause they
depends on its squared value.
5.2.2
Switching losses
The switching losses are due to the turn on and off of the internal high side MOSFET.
Equation 20
where TON and TOFF are the turn-on and turn-off times of the internal high side switch.
These are approximately in the range of 15 ns to 20 ns.This loss is important at high
frequency.
5.2.3
Gate charge losses
The gate charge losses derive from switching the gate capacitance of the internal
MOSFETs. The gate capacitances (CH for the high side MOSFETs and CL for the low side
MOSFETs) are charged and discharged with the input voltage at the switching frequency.
Equation 21
These losses are also directly proportional to the switching frequency and input voltage but
are usually negligible compared with the conduction and switching losses.
P
MOS
I
O
2
R
P
D
() R
N
1D
–
() R
L
+
⋅
+
⋅
()
⋅
=
P
CIN COUT
,
I
O
2
D1
D
–
()
⋅
() ESR
CIN
I
2
Δ
12
-------- ESR
COUT
⋅
+
⋅⋅
=
P
SWITCHING
V
IN
I
O
F
SW
T
ON
T
OFF
+
()
2
------------------------------------
⋅⋅
⋅
=
P
GATECHARGE
V
IN
C
H
C
L
+
() F
SW
⋅⋅
=
-



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