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AN2503 bảng dữ liệu(PDF) 19 Page - STMicroelectronics |
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AN2503 bảng dữ liệu(HTML) 19 Page - STMicroelectronics |
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19 / 30 page ![]() AN2503 PDP Power Devices characteristics 19/30 Typical voltage requirements for a PDP are: ● Sustain voltage Vs = 200 V ● Set voltage Vset= 400 V ● Reset voltage Vreset= -150 V 4.1.2 Energy recovery section For Energy recovery circuit, the maximum voltage stress is Vs/2 ≈ 100 V, and the current stress depends on the device. The clamping diodes have to withstand a current lower than 10 A, whilst the ERC switches and the ERC diodes have to be able to handle a resonant half-sinusoidal current up to 100 A peak. The typical current waveform in the Energy recovery circuit is shown in Figure 23. The key parameters of the DERC diode for the energy recovery circuit have been optimized in order to decrease power losses. Figure 23. Inductor current For ER circuit new devices with low voltage drop and very fast turn ON have been developed. ● Energy recovery diodes STTH60P03, STTH40P03 Energy recovery diodes (D1, D3, D5, and D7) have been tailored on this application optimizing key parameters to reduce power losses [6.], [7.]. They have the ability to handle large repetitive peak current (Irp), in conjunction with a lower reverse current (IRM) and peak forward voltage (VFP). Table 3. STTH60P03 Features Symbol Parameter Test conditions Min. Typ Max. Unit IRM Reverse recovery current T j = 100°C IF = 60 A VR = 100 V dIF/dt = 200 A/µs 67.5 A Sfactor Softness factor 0.5 VFP Peak forward voltage Tj = 25°C IF = 60 A dIF/dt = 400 A/µs 2.5 3.5 V ER C current T1 C lam ping current T3 D2 D3 |
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