REV. C

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a

MAT03

Low Noise, Matched

Dual PNP Transistor

FEATURES

Dual Matched PNP Transistor

Low Offset Voltage: 100

V Max

Low Noise: 1 nV/

√Hz @ 1 kHz Max

High Gain: 100 Min

High Gain Bandwidth: 190 MHz Typ

Tight Gain Matching: 3% Max

0.3

typ

PIN CONNECTION

TO-78

(H Suffix)

GENERAL DESCRIPTION

The MAT03 dual monolithic PNP transistor offers excellent

parametric matching and high frequency performance. Low

noise characteristics (1 nV/

(190 MHz typical), and low offset voltage (100

µV max), makes

the MAT03 an excellent choice for demanding preamplifier appli-

cations. Tight current gain matching (3% max mismatch) and

high current gain (100 min), over a wide range of collector cur-

rent, makes the MAT03 an excellent choice for current mirrors.

A low value of bulk resistance (typically 0.3

Ω) also makes the

MAT03 an ideal component for applications requiring accurate

logarithmic conformance.

Each transistor is individually tested to data sheet specifications.

Device performance is guaranteed at 25

°C and over the extended

industrial and military temperature ranges. To ensure the long-

term stability of the matching parameters, internal protection

diodes across the base-emitter junction clamp any reverse base-

emitter junction potential. This prevents a base-emitter breakdown

condition that can result in degradation of gain and matching

performance due to excessive breakdown current.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781/329-4700

www.analog.com

Fax: 781/326-8703

© Analog Devices, Inc., 2002