RFD7N10LE datasheet(2/7 Pages) INTERSIL

2 / 7 page

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

RFD7N10LE,

RFD7N10LESM

UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

100

Drain to Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

100

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

+10, -8

Drain Current

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Refer to Peak Current Curve

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Refer to UIS Curve

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.318

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 150oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V

100

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA1

Zero Gate Voltage Drain Current

IDSS

VDS = 95V, VGS = 0V

µA

VDS = 90V, VGS = 0V, TC = 150

250

µA

Gate to Source Leakage Current

IGSS

VGS = +10, -8V

µA

On Resistance

rDS(ON)

ID = 7A, VGS = 5V

0.300

Ω

Turn-On Time

tON

VDD = 50V, ID = 7A

RL = 7.1Ω, VGS = 5V

RGS = 2.5Ω

110

Turn-On Delay Time

td(ON)

-10-

Rise Time

-65-

Turn-Off Delay Time

td(OFF)

-23-

Fall Time

-18-

Turn-Off Time

tOFF

Total Gate Charge

Qg(TOT)

VGS = 0 to 10V

VDD = 80V

ID = 7A,

RL = 11.4Ω

125

150

Gate Charge at 5V

Qg(5)

VGS = 0 to 5V

Threshold Gate Charge

Qg(TH)

VGS = 0 to 1V

3.7

4.5

Input Capacitance

CISS

VDS = 25V, VGS = 0V

f = 1MHz

360

Output Capacitance

COSS

-70-

Reverse Transfer Capacitance

CRSS

-20-

Thermal Resistance Junction to Case

RθJC

3.15

oC/W

Thermal Resistance Junction to Ambient

RθJA

TO-251 and TO-252 Package

100

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage

VSD

ISD = 7A

1.5

Reverse Recovery Time

trr

ISD = 7A, dISD/dt = 100A/µs

130

RFD7N10LE, RFD7N10LESM

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