6

PSPICE Electrical Model

SUBCKT RFD7N10LE 2 1 3;

rev 6/2/93

CA 12 8 7.5e-10

CB 15 14 7.6e-10

CIN 6 8 4.03e-10

DBODY 7 5 DBODYMOD

DBREAK 5 11 DBREAKMOD

DPLCAP 10 5 DPLCAPMOD

EBREAK 11 7 17 18 116.7

EDS 14 8 5 8 1

EGS 13 8 6 8 1

ESG 6 10 6 8 1

EVTHRES 6 21 19 8 1

EVTEMP 20 6 18 22 1

IT 8 17 1

LDRAIN 2 5 1e-9

LGATE 1 9 3.7e-9

LSOURCE 3 7 3.4e-9

MMED 16 6 8 8 MMEDMOD

MSTRO 16 6 8 8 MSTROMOD

MWEAK 16 21 8 8 MWEAKMOD

RBREAK 17 18 RBREAKMOD 1

RDRAIN 50 16 RDRAINMOD 9.4e-2

RGATE 9 20 3.3

RLDRAIN 2 5 10

RLGATE 1 9 37

RLSOURCE 3 7 34

RSLC1 5 51 RSLCMOD 1e-6

RSLC2 5 50 1e3

RSOURCE 8 7 RSOURCEMOD 1.3e-2

RVTHRES 22 8 RVTHRESMOD 1

RVTEMP 18 19 RVTEMPMOD 1

S1A 6 12 13 8 S1AMOD

S1B 13 12 13 8 S1BMOD

S2A 6 15 14 13 S2AMOD

S2B 13 15 14 13 S2BMOD

VBAT 22 19 DC 1

ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*17.3),3.5))}

.MODEL DBODYMOD D (IS = 1.2e-12 RS = 1.2e-2 TRS1 = 1.2e-3 TRS2 = 1.03e-6 CJO = 6.7e-10 TT = 6.9e-8 M = 0.77)

.MODEL DBREAKMOD D (RS = 9.9e-1 TRS1 = 1e-3 TRS2 = -2e-5)

.MODEL DPLCAPMOD D (CJO = 4.3e-10 IS = 1e-30 M = 0.9 N = 10)

.MODEL MMEDMOD NMOS (VTO = 1.88 KP = 5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.3)

.MODEL MSTROMOD NMOS (VTO = 2.13 KP = 12.4 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)

.MODEL MWEAKMOD NMOS (VTO = 1.59 KP = 0.12 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 33 RS = 0.1)

.MODEL RBREAKMOD RES (TC1 = 1.05e-3 TC2 = -5e-7)

.MODEL RDRAINMOD RES (TC1 = 8.1e-3 TC2 = 2.4e-5)

.MODEL RSLCMOD RES (TC1 = 3e-3 TC2 = 2e-6)

.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)

.MODEL RVTHRESMOD RES (TC1 = -1.5e-3 TC2 = -4.3e-6)

.MODEL RVTEMPMOD RES (TC1 = -1.6e-3 TC2 = 1.5e-6)

.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.5 VOFF= -2.5)

.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.5 VOFF= -4.5)

.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.3 VOFF= 0.2)

.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.2 VOFF= -0.3)

.ENDS

NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options;

IEEE Power Electronics Specialist Conference Records 1991.

18

22

+

-

6

8

+

-

5

51

19

8

+

-

17

18

6

8

+

-

5

8

+

-

RBREAK

RVTEMP

VBAT

RVTHRES

IT

17

18

19

22

12

13

15

S1A

S1B

S2A

S2B

CA

CB

EGS

EDS

14

8

13

8

14

13

MWEAK

EBREAK

DBODY

RSOURCE

SOURCE

11

7

3

LSOURCE

RLSOURCE

CIN

RDRAIN

EVTHRES

16

21

8

MMED

MSTRO

DRAIN

2

LDRAIN

RLDRAIN

DBREAK

DPLCAP

ESLC

RSLC1

10

5

51

50

RSLC2

1

GATE

RGATE

EVTEMP

9

ESG

LGATE

RLGATE

20

+

-

+

-

+

-

6

RFD7N10LE, RFD7N10LESM