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W9812G2KB bảng dữ liệu(PDF) 3 Page - Winbond

tên linh kiện W9812G2KB
Giải thích chi tiết về linh kiện  1M X 4 BANKS X 32 BITS SDRAM
PDF  43 Pages
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W9812G2KB
Publication Release Date: Jun. 20, 2014
- 3 -
Revision: A01
1.
GENERAL DESCRIPTION
W9812G2KB is a high-speed synchronous dynamic random access memory (SDRAM), organized as
1M words
 4 banks  32 bits. W9812G2KB delivers a data bandwidth of up to 166M words per
second. To fully comply with the personal computer industrial standard, W9812G2KB is sorted into
two grade parts: -6 and -6I. The -6 and-6I grade parts are compliant to the 166MHz/CL3 specification
(the -6I industrial grade which is guaranteed to support -40°C
≤ TA ≤ 85°C).
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle.
The multiple bank nature enables interleaving among internal banks to hide the precharging time.By
having a programmable Mode Register, the system can change burst length, latency cycle, interleave
or sequential burst to maximize its performance. W9812G2KB is ideal for main memory in high
performance applications.
2.
FEATURES
3.3V ± 0.3V power supply
1,048,576 words
 4 banks  32 bits organization
Self Refresh Current: Standard and Low Power
CAS Latency: 2 & 3
Burst Length: 1, 2, 4, 8 and full page
Sequential and Interleave Burst
Byte data controlled by DQM0-3
Auto-precharge and controlled precharge
Burst read, single write operation
4K refresh cycles/64mS
Interface: LVTTL
Packaged in TFBGA 90 Ball (8 x13 mm2), using Lead free materials with RoHS compliant
Dual-Die-Package (DDP), two pieces of 64M bits chip sealed in one package



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