FSR1110D datasheet(3/9 Pages) INTERSIL

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Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Forward Voltage

VSD

ISD = 1.0A

0.6

1.8

Reverse Recovery Time

trr

ISD = 1.0A, dISD/dt = 100A/µs

110

Electrical Speciﬁcations up to 100K RAD TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

Drain to Source Breakdown Volts

(Note 3)

BVDSS

VGS = 0, ID = 1mA

100

Gate to Source Threshold Volts

(Note 3)

VGS(TH)

VGS = VDS, ID = 1mA

1.5

4.0

Gate to Body Leakage

(Notes 2, 3)

IGSS

VGS = ±20V, VDS = 0V

100

Zero Gate Leakage

(Note 3)

IDSS

VGS = 0, VDS = 80V

µA

Drain to Source On-State Volts

(Notes 1, 3)

VDS(ON)

VGS = 12V, ID = 1.0A

0.710

Drain to Source On Resistance

(Notes 1, 3)

rDS(ON)12

VGS = 12V, ID = 0.6A

0.680

Ω

NOTES:

1. Pulse test, 300

µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.

Single Event Effects (SEB, SEGR) Note 4

TEST

SYMBOL

ENVIRONMENT (NOTE 5)

APPLIED

VGS BIAS

(V)

(NOTE 6)

MAXIMUM

VDS BIAS (V)

ION

SPECIES

TYPICAL LET

(MeV/mg/cm)

TYPICAL

RANGE (

µ)

Single Event Effects Safe Operating Area

SEESOA

-20

100

-10

100

-15

-20

NOTES:

4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.

5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

FSR1110D, FSR1110R

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