BUZ73A datasheet(2/5 Pages) INTERSIL

2 / 5 page

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

BUZ76A

UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

200

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

200

Continuous Drain Current (TC = 30

oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

5.8

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.32

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

IEC Climatic Category - DIN IEC 68-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

55/150/56

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V

200

Gate to Threshold Voltage

VGS(TH)

VGS = VDS, ID = 1mA (Figure 9)

2.1

Zero Gate Voltage Drain Current

IDSS

TJ = 25

oC, V

DS = 200V, VGS = 0V

250

µA

TJ = 125

oC, V

DS = 200V, VGS = 0V

100

1000

µA

Gate to Source Leakage Current

IGSS

VGS = 20V, VDS = 0V

100

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 3.5A, VGS = 10V (Figure 8)

0.5

0.600

Ω

Forward Transconductance (Note 2)

gfs

VDS = 25V, ID = 3.5A (Figure 11)

2.2

3.5

Turn-On Delay Time

td(ON)

VCC = 30V, ID ≈ 2.8A, VGS = 10V, RGS =50Ω,

RL = 10Ω. (Figures 14, 15)

-1520

Rise Time

-4060

Turn-Off Delay Time

td(OFF)

-7090

Fall Time

-4055

Input Capacitance

CISS

VDS = 25V, VGS = 0V, f = 1MHz

(Figure 10)

450

600

Output Capacitance

COSS

100

160

Reverse Transfer Capacitance

CRSS

-5080

Thermal Resistance Junction to Case

RθJC

≤ 3.1

oC/W

Thermal Resistance Junction to Ambient

RθJA

≤ 75

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

ISD

TC = 25

5.8

Pulsed Source to Drain Current

ISDM

Drain to Source Diode Voltage

VSD

TJ = 25

oC, I

SD = 11.6A, VGS = 0V

1.4

1.7

Reverse Recovery Time

trr

TJ = 25

oC, I

SD = 5.8A, dISD/dt = 100A/µs,

VR = 100V

200

Reverse Recovery Charge

QRR

0.6

µC

NOTES:

2. Pulse Test: Pulse width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

BUZ73A

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