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BUZ73A bảng dữ liệu(PDF) 1 Page - Intersil Corporation |
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BUZ73A bảng dữ liệu(HTML) 1 Page - Intersil Corporation |
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1 / 5 page ![]() Semiconductor 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ73A 5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA4600. Features • 5.8A, 200V •rDS(ON) = 0.600Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-220AB Ordering Information PART NUMBER PACKAGE BRAND BUZ73A TO-220AB BUZ73A NOTE: When ordering, use the entire part number. G D S GATE DRAIN (FLANGE) SOURCE DRAIN Data Sheet October 1998 File Number 2263.1 [ /Title (BUZ73 A) /Subject (5.8A, 200V, 0.600 Ohm, N- Channel Power MOS- FET) /Author () /Key- words (Harris Semi- conduc- tor, N- Channel Power MOS- FET, TO- 220AB) /Creator () /DOCIN FO pdf- mark [ /Page- Mode /UseOut- lines /DOC- VIEW |
Số phần tương tự - BUZ73A |
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Mô tả tương tự - BUZ73A |
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