IDT74FCT810CTEB datasheet(2/6 Pages) IDT

2 / 6 page

IDT54/74FCT810BT/CT

FAST CMOS BUFFER/CLOCK DRIVER

MILITARY AND COMMERCIAL TEMPERATURE RANGES

9.4

PIN DESCRIPTION

3103 tbl 01

CAPACITANCE (TA = +25

°C, f = 1.0MHz)

Symbol

Parameter(1)

Conditions

Typ.

Max.

Unit

CIN

Input

Capacitance

VIN = 0V

4.5

6.0

COUT

Output

Capacitance

VOUT = 0V

5.5

8.0

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol

Rating

Commercial

Military

Unit

VTERM(2) Terminal Voltage

with Respect to

GND

–0.5 to +7.0

VTERM(3) Terminal Voltage

with Respect to

GND

–0.5 to VCC

+0.5

–0.5 to VCC

+0.5

Operating

Temperature

0 to +70

–55 to +125

°C

TBIAS

Temperature

Under Bias

–55 to +125

–65 to +135

°C

TSTG

Storage

Temperature

–55 to +125

–65 to +150

°C

IOUT

DC Output

Current

–60 to +120

NOTES:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-

INGS may cause permanent damage to the device. This is a stress rating

only and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this specification is

not implied.

Exposure to absolute maximum rating conditions for

extended periods may affect reliability. No terminal voltage may exceed

VCC by +0.5V unless otherwise noted.

2. Input and VCC terminals.

3. Output and I/O terminals.

3103 lnk 03

DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE

Following Conditions Apply Unless Otherwise Specified

Commercial: TA = 0

°C to +70°C, VCC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10%

NOTES:

1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.

2. Typical values are at Vcc = 5.0V, +25

°C ambient.

3. Not more than one output should be tested at one time. Duration of the test should not exceed one second.

4. Duration of the condition can not exceed one second.

5. The test limit for this parameter is

± 5µA at TA = –55°C.

Symbol

Parameter

Test Conditions(1)

Min.

Typ.(2)

Max.

Unit

VIH

Input HIGH Level

Guaranteed Logic HIGH Level

2.0

—

VIL

Input LOW Level

Guaranteed Logic LOW Level

—

0.8

II H

Input HIGH Current(5)

VCC = Max.

VI = 2.7V

—

±1

µA

II L

Input LOW Current(5)

VCC = Max.

VI = 0.5V

—

±1

µA

IOZH

High Impedance Output Current

VCC = Max.

VO = 2.7V

—

±1

µA

IOZL

(3-State Output pins)(5)

VO = 0.5V

—

±1

µA

Input HIGH Current(5)

VCC = Max., VI = VCC (Max.)

—

±1

µA

VIK

Clamp Diode Voltage

VCC = Min., IIN= –18mA

—

–0.7

–1.2

IOS

Short Circuit Current

VCC = Max.(3), VO = GND

–60

–120

–225

VOH

Output HIGH Voltage

VCC = Min.

VIN = VIH or VIL

IOH = –12mA MIL.

IOH = –15mA COM'L.

2.4

3.3

—

IOH = –24mA MIL.

IOH = –32mA COM'L.(4)

2.0

3.0

—

VOL

Output LOW Voltage

VCC = Min.

VIN = VIH or VIL

IOL = 32mA MIL.

IOL = 48mA COM'L.

—

0.3

0.55

IOFF

Input/Output Power Off Leakage(5) VCC = 0V, VIN or VO

≤ 4.5V

—

±1

µA

Input Hysteresis for all inputs

—

150

—

ICCL

ICCH

ICCZ

Quiescent Power Supply Current

VCC = Max., VIN = GND or VCC

—

500

µA

3103 lnk 04

NOTE:

1. This parameter is measured at characterization but not tested.

3103 lnk 02

Pin Names

Description

OEA, OEB

3-State Output Enable Inputs (Active LOW)

INA, INB

Clock Inputs

OAn,

OBn

Clock Outputs

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