STP413D datasheet(3/10 Pages) STANSON

3 / 10 page

STP413D

P Channel Enhancement Mode MOSFET

12.0A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STP413D 2009. V1

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min

Typ

Max

Uni

Static

Drain-Source

Breakdown Voltage

V(BR)DSS

VGS=0V,ID=-250uA

-40

Gate Threshold

Voltage

VGS(th)

VDS=VGS,ID=-250uA

-1.0

-2.5

Gate Leakage Current

IGSS

VDS=0V,VGS=±20V

±100

Zero Gate Voltage

Drain Current

IDSS

VDS=-40V,VGS=0V

-1

VDS=-40V,VGS=0V

TJ=55℃

-5

On-State Drain

Current

ID(on)

VDS≧-10V,VDS=-5V

-30

Drain-source On-

Resistance

RDS(on)

VGS=-10V,ID=-12A

VGS=-4.5V,ID=-8A

mΩ

Forward

Transconductance

gfs

VDS=-5V,ID=-12A

Diode Forward Voltage

VSD

IS=-1.0A,VGS=0V

-1.0

Dynamic

Total Gate Charge

VDS=-10V,VDS=-20V

ID=-12A

16.5

Gate-Source Charge

Qgs

3.8

Gate-Drain Charge

Qgd

3.5

Input Capacitance

Ciss

VDS =-20V,VGS=0V

F=1MHz

900

Output Capacitance

Coss

Reverse

TransferCapacitance

Crss

115

Turn-On Time

td(on)

VGS=-10V,VDS=-20V

RL=1.6Ω,RGEN=3Ω

6.9

Turn-Off Time

td(off)

44.8

41.2

STP413D bảng dữ liệu(PDF) 3 Page - Stanson Technology

STP413D bảng dữ liệu(HTML) 3 Page - Stanson Technology

Html Pages

1 2 3 4 5 6 7 8 9 10

bảng dữ liệu tải về

Link URL