PDTC115TS datasheet(5/10 Pages) PHILIPS

5 / 10 page

9397 750 14021

Product data sheet

Rev. 04 — 17 February 2005

5 of 10

Philips Semiconductors

PDTC115T series

NPN resistor-equipped transistors; R1 = 100 k

Ω, R2 = open

Characteristics

Table 8:

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB =50V; IE = 0 A

100

ICEO

collector-emitter

cut-off current

VCE =30V; IB = 0 A

--1

µA

VCE =30V; IB =0A;

Tj = 150 °C

--50

µA

IEBO

emitter-base cut-off

current

VEB =5V; IC = 0 A

100

hFE

DC current gain

VCE =5V; IC = 1 mA

100

VCEsat

collector-emitter

saturation voltage

IC = 5 mA; IB = 0.25 mA

150

bias resistor 1 (input)

100

130

Ω

collector capacitance

IE =ie = 0 A; VCB =10V;

f=1MHz

2.5

VCE = 5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −40 °C

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −40 °C

Fig 1.

DC current gain as a function of collector

current; typical values

Fig 2.

Collector-emitter saturation voltage as a

function of collector current; typical values

006aaa058

IC (mA)

10−1

102

103

hFE

102

(1)

(2)

(3)

006aaa059

IC (mA)

10−1

102

10−1

VCEsat

(V)

10−2

(1)

(3)

(2)

PDTC115TS bảng dữ liệu(PDF) 5 Page - NXP Semiconductors

PDTC115TS bảng dữ liệu(HTML) 5 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10

bảng dữ liệu tải về

Link URL