AL8806Q

Document number: DS36905 Rev. 1 - 2

3 of 13

www.diodes.com

April 2014

© Diodes Incorporated

AL8806Q

Symbol

Parameter

Min

Max

Unit

Operating Input Voltage relative to GND

6.0

30

V

Voltage High for PWM Dimming Relative to GND

2.6

5.5

V

Voltage range for 20% to 100% DC Dimming Relative to GND

0.5

2.5

V

Voltage Low for PWM Dimming Relative to GND

0

0.4

V

Maximum Switching Frequency

—

1

MHz

Continuous Switch Current

—

1.5

A

Junction Temperature Range

-40

+125

°C

Symbol

Parameter

Conditions

Min

Typ.

Max

Unit

Internal regulator start up threshold

—

—

5.9

V

Internal regulator hysteresis threshold

100

—

300

mV

Quiescent current

Output not switching (Note 5)

—

—

350

µA

Input supply Current

CTRL pin floating f = 250kHz

—

1.8

5

mA

Set current Threshold Voltage

95

100

105

mV

Set threshold hysteresis

—

—

±20

—

mV

SET pin input current

—

16

22

µA

CTRL pin input resistance

Referred to internal reference

—

50

—

kΩ

Internal Reference Voltage

—

—

2.5

—

V

On Resistance of SW MOSFET

—

0.18

0.35

Ω

Switch leakage current

—

—

0.5

μA

Thermal Resistance Junction-to-

Ambient (Note 6)

(Note 7)

—

69

—

°C/W

Thermal Resistance Junction-to-Case

(Note 6)

(Note 7)

—

4.3

—

Notes:

6. Refer to figure 5 for the device derating curve.

7. Measured on an FR4 51x51mm PCB with 2oz copper standing in still air with minimum recommended pad layout on top layer and thermal vias to bottom

layer maximum area ground plane. For better thermal performance, larger copper pad for heat-sink is needed.

8. Dominant conduction path via exposed pad. Refer to figure 5 for the device derating curve.