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AL8806Q bảng dữ liệu(PDF) 2 Page - Diodes Incorporated |
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AL8806Q bảng dữ liệu(HTML) 2 Page - Diodes Incorporated |
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2 / 13 page ![]() AL8806Q Document number: DS36905 Rev. 1 - 2 2 of 13 www.diodes.com April 2014 © Diodes Incorporated AL8806Q Pin Descriptions Pin Name Pin Number Functions SET 1 Set Nominal Output Current Pin. Configure the output current of the device. GND 2, 3 GND Pin CTRL 4 Dimming and On/Off Control Input. • Leave floating for normal operation. (VCTRL = VREF = 2.5V giving nominal average output current IOUTnom = 0.1/RS) • Drive to voltage below 0.4V to turn off output current • Drive with DC voltage (0.5V < VCTRL < 2.5V) to adjust output current from 20% to 100% of IOUTnom • A PWM signal (low level ≤ 0.4V and high level > 2.6; transition times less than 1us) allows the output current to be adjusted below the level set by the resistor connected to SET input pin. SW 5, 6 Switch Pin. Connect inductor/freewheeling diode here, minimizing track length at this pin to reduce EMI. N/C 7 No Connection VIN 8 Input Supply Pin. Must be locally decoupled to GND with > 2.2µF X7R ceramic capacitor – see applications section for more information. EP EP Exposed pad: Connect to GND and thermal mass for enhanced thermal impedance. It should not be used as electrical ground conduction path. Functional Block Diagram Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Parameter Ratings Unit ESD HBM Human Body Model ESD Protection 2.5 kV ESD MM Machine Model ESD Protection 200 V ESD CDM Charged Device Model ESD Protection — V VIN Continuous VIN pin voltage relative to GND -0.3 to +36 V Transient VIN pin voltage relative to GND -0.3 to +40 VSW SW voltage relative to GND -0.3 to +36 V VCTRL CTRL pin input voltage -0.3 to +6 V ISW-RMS DC or RMS Switch current 1.65 A ISW-PK Peak Switch current (<10%) 3 A TJ Junction Temperature 150 °C TLEAD Lead Temperature Soldering 300 °C TST Storage Temperature Range -65 to +150 °C Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices. |
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