11

Single Ended

GP

4.20 C/W

125

65

40

125

PARAMETER

SYMBOL

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Common Source Power Gain

Drain Efficiency

Total

Device

Dissipation

Junction to

Case Thermal

Resistance

Maximum

Junction

Temperature

Storage

Temperature

Drain to

Source

Voltage

Gate to

Source

Voltage

-65 C to 150 C

C

V

Load Mismatch Tolerance

VSWR

Relative

0.13

7.50

Ids =

mA, Vgs = -8V

Idq =

A, Vds =

V, F =

0.13

Bvdss

Drain Breakdown Voltage

V

Idq =

Idq = 0.13

2,000

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com

2,000

2,000

V

PARAMETER

SYMBOL

MIN

TYP

MAX

UNITS

TEST CONDITIONS

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

RF CHARACTERISTICS (

20.0

ABSOLUTE MAXIMUM RATINGS ( T =

Gps

28.0

A, Vds =

V, F =

A, Vds =

V, F =

28.0

28.0

Watts

MHz

MHz

MHz

Watts

Package Style

20.0

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

General Description

Vds =



dB

%

o

o

o

o

o

RF POWER GAN TRANSISTOR

REVISION 09/09/2013

2

25 C )

WATTS OUTPUT )

200

polyfet rf devices

GP2001

10:1

ROHS COMPLIANT

V

-10

to +

Polyfet's GAN (on SiC) HEMT

power transistors contain no

internal matching; making them

suitable for both broadband and

narrow band applications.

The use of a thermally enhanced

package enables this device to

have superior heat dissipation

properties. The high drain break

down voltage permits this device

to operate over a wide voltage

range.

4.0

0.56

7.2

2.0

V,

Vgs = -8V

Ciss

Crss

Coss

Vds =

Idss

mA

pF

pF

pF

Common Source Output Capacitance

Common Source Feedback Capacitance

Common Source Input Capacitance

Vgs

Zero Bias Drain Current

Gate Bias for Drain Current

V

28.0

Vds =

Vgs =-8V, F = 1 MHz

28.0

Vds =

Vgs =-8V, F = 1 MHz

28.0

Vds =

Vgs =-8V, F = 1 MHz

28.0

-2.3

0.13A

7.20

Idsat

Saturation Current

Amp

Vgs = +2V, Vds = 10V

Ids =

28.0 V

Suitable for use across 1-3000Mhz