General Description
Polyfets GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications.
The use of a thermally enhanced package enables this device to have superior heat dissipation properties. The high drain break down voltage permits this device to operate over a wide voltage range.

RF POWER GAN TRANSISTOR
20.0 Watts Single Ended
Package Style G2

HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT

Suitable for use across 1-3000Mhz