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GP800FSS12 bảng dữ liệu(PDF) 1 Page - Dynex Semiconductor |
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GP800FSS12 bảng dữ liệu(HTML) 1 Page - Dynex Semiconductor |
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1 / 11 page ![]() GP800FSS12 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/11 The GP800FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry. Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications. These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. The powerline range of high power modules includes dual and single switch configurations with a range of current and voltage capabilities to match customer system demands. Typical applications include dc motor drives, ac pwm drives, main traction drives and auxiliaries, large ups systems and resonant inverters. FEATURES s n - Channel s Enhancement Mode s High Input Impedance s Optimised For High Power High Frequency Operation s Isolated Base s Full 1200V Capability s 800A Per Module APPLICATIONS s High Power Switching s Motor Control s Inverters s Traction Systems KEY PARAMETERS V CES 1200V V CE(sat) (typ) 2.7V I C (max) 800A I C(PK) (max) 1600A Fig. 1 Electrical connections - (not to scale) Fig.2 Single switch circuit diagram Outline type code: F (See package details for further information) ORDERING INFORMATION Order As: GP800FSS12 Note: When ordering, please use the complete part number. 1 3 2 4 9 8 7 10 11 12 6 5 3/4(E) 9(G1) 1/2(C) 8(E1) 7(C1) GP800FSS12 Powerline N-Channel Single Switch IGBT Module Preliminary Information Replaces October 1999 version, DS5239-2.0 DS5239-3.0 January 2000 |
Số phần tương tự - GP800FSS12 |
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Mô tả tương tự - GP800FSS12 |
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