AT25DF641_13 datasheet(13/56 Pages) ETC2

13 / 56 page

AT25DF641

3680F–DFLASH–4/10

Figure 7-1.

Byte Program

SCK

MS B

10 11

37 38

31 32

29 30

OP C ODE

HIG H-IMP E DANC E

MS B

ADDR E S S B IT S A23-A0

DAT A IN

Figure 7-2.

Page Program

SCK

MS B

37 38

31 32

29 30

OP C ODE

HIG H-IMP E DANC E

MS B

ADDR E S S BITS A23-A0

DATA IN BY TE 1

MS B

DATA IN BY TE n

7.2.

Dual-Input Byte/Page Program

The Dual-Input Byte/Page Program command is similar to the standard Byte/Page Program command and can be

used to program anywhere from a single byte of data up to 256-bytes of data into previously erased memory

locations. Unlike the standard Byte/Page Program command, however, the Dual-Input Byte/Page Program

command allows two bits of data to be clocked into the device on every clock cycle rather than just one.

Before the Dual-Input Byte/Page Program command can be started, the Write Enable command must have been

previously issued to the device (see “Write Enable” on page 21) to set the Write Enable Latch (WEL) bit of the

Status Register to a logical “1” state. To perform a Dual-Input Byte/Page Program command, an opcode of A2h

must be clocked into the device followed by the three address bytes denoting the first byte location of the memory

array to begin programming at. After the address bytes have been clocked in, data can then be clocked into the

device two bits at a time on both the SOI and SI pins.

The data is always input with the MSB of a byte first, and the MSB is always input on the SOI pin. During the first

clock cycle, bit seven of the first data byte would be input on the SOI pin while bit six of the same data byte would

be input on the SI pin. During the next clock cycle, bits five and four of the first data byte would be input on the

SOI and SI pins, respectively. The sequence would continue with each byte of data being input after every four

clock cycles. Like the standard Byte/Page Program command, all data clocked into the device is stored in an

internal buffer.

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