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CSD19503KCS bảng dữ liệu(PDF) 4 Page - Texas Instruments

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tên linh kiện CSD19503KCS
Giải thích chi tiết về linh kiện  80 V N-Channel NexFET Power MOSFETs
PDF  10 Pages
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Trang chủ  http://www.ti.com
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CSD19503KCS bảng dữ liệu(HTML) 4 Page - Texas Instruments

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−75 −50 −25
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TC - Case Temperature (ºC)
VGS = 6V
VGS = 10V
ID =60A
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VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
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TC - Case Temperature (ºC)
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VGS - Gate-to- Source Voltage (V)
TC = 25°C,I D = 60A
TC = 125°C,I D = 60A
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Qg - Gate Charge (nC)
ID = 60A
VDS = 40V
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VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
CSD19503KCS
SLPS479 – DECEMBER 2013
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 4. Gate Charge
Figure 5. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 6. Threshold Voltage vs. Temperature
Figure 7. On-State Resistance vs. Gate-to-Source Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 8. Normalized On-State Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
4
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