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CSD19503KCS bảng dữ liệu(PDF) 2 Page - Texas Instruments

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CSD19503KCS
SLPS479 – DECEMBER 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 250 μA
80
V
IDSS
Drain-to-Source Leakage Current
VGS = 0 V, VDS = 64 V
1
μA
IGSS
Gate-to-Source Leakage Current
VDS = 0 V, VGS = 20 V
100
nA
VGS(th)
Gate-to-Source Threshold Voltage
VDS = VGS, ID = 250 μA
2.2
2.8
3.4
V
VGS = 6 V, ID = 60 A
8.8
10.9
m
RDS(on)
Drain-to-Source On Resistance
VGS = 10 V, ID = 60 A
7.6
9.2
m
gfs
Transconductance
VDS = 8 V, ID = 60 A
110
S
Dynamic Characteristics
Ciss
Input Capacitance
2100
2730
pF
Coss
Output Capacitance
VGS = 0 V, VDS = 40 V, f = 1 MHz
555
721
pF
Crss
Reverse Transfer Capacitance
8.5
11.1
pF
RG
Series Gate Resistance
1.2
2.4
Qg
Gate Charge Total (10 V)
28
36
nC
Qgd
Gate Charge Gate to Drain
5.4
nC
VDS = 40 V, ID = 60 A
Qgs
Gate Charge Gate to Source
9.8
nC
Qg(th)
Gate Charge at Vth
6.1
nC
Qoss
Output Charge
VDS = 40 V, VGS = 0 V
71
nC
td(on)
Turn On Delay Time
7
ns
tr
Rise Time
3
ns
VDS = 40 V, VGS = 10 V,
IDS = 60 A, RG = 0 Ω
td(off)
Turn Off Delay Time
11
ns
tf
Fall Time
2
ns
Diode Characteristics
VSD
Diode Forward Voltage
ISD = 60 A, VGS = 0 V
0.9
1.1
V
Qrr
Reverse Recovery Charge
119
nC
VDS= 40 V, IF = 60 A,
di/dt = 300 A/
μs
trr
Reverse Recovery Time
72
ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Thermal Resistance Junction to Case
0.8
°C/W
RθJA
Thermal Resistance Junction to Ambient
62
°C/W
2
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