AS5130 datasheet(8/42 Pages) AMSCO

8 / 42 page

www.austriamicrosystems.com/AS5130

Revision 1.12

7 - 41

AS5130

Datasheet - Electrical Character i s t ics

VOH

High level Output voltage

VDD -

0.5

VOL

Low level Output Voltage

VSS +

0.4

Capacitive Load

tslew

Slew Rate

External capacitive load C_L = 35pF

External series resistance R = 0

Junction temperature TJ = 136ºC

Rise time of the internal driver t_rise = 3ns

Fall time of the internal driver t_fall = 3ns

tdelay

Time Rise Fall

Vout_wake up

Wake up output

Open drain output with tri-state behavior

Programming Parameters

VPROG

Programming Voltage

Static voltage at pin PROG

8.0

8.5

IPROG

Programming Current

100

TambPROG

Programming ambient temperature

During programming

ºC

tPROG

Programming time

Timing is internally generated

µs

VR,prog

Analog readback voltage

During Analog Readback mode at pin

PROG

0.5

VR,unprog

2.2

3.5

WakeLSB

Angle difference threshold for wake up

generation

Factory setting is 4 LSB, value is accessible

by SSI in buffered register and can be

changed by customer.

127

LSB

8-bit PWM output

NPWM

PWM resolution

8bit

PWMIN

PWM pulse width

Angle = 0º (00H)

0.71

0.55

0.43

µs

PWMAX

PWM pulse width

Angle = 358.6º (FFH)

182.88

142.24

108.48

µs

PWP

PWM Period

Over full temperature range

183.6

142.8

108.9

µs

fPWM

PWM Frequency

=1 / PWM period

5.44

9.18

kHz

Hyst

Digital hysteresis

At change of rotation direction

bit

Serial 8-bit Output

fCLK

Clock Frequency

Normal operation

6MHz

tCLK

166.6

fCLK, P

Clock Frequency

During OTP programming

250

500

kHz

Table 3. Electrical Characteristics (Continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

AS5130 bảng dữ liệu(PDF) 8 Page - ams AG

AS5130 bảng dữ liệu(HTML) 8 Page - ams AG

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42

bảng dữ liệu tải về

Link URL