LM35CZ datasheet(5/29 Pages) TI1

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LM35

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SNIS159D – AUGUST 1999 – REVISED OCTOBER 2013

ELECTRICAL CHARACTERISTICS

(1)(2) (continued)

LM35

LM35C, LM35D

UNITS

PARAMETER

TEST CONDITIONS

TYP

TESTED

DESIGN

TYP

TESTED

DESIGN

(MAX.)

LIMIT(3)

LIMIT(4)

LIMIT(3)

LIMIT(4)

VS = 5 V, 25°C

VS = 5 V

105

158

138

Quiescent current(8)

µA

VS = 30 V, 25°C

56.2

VS = 30 V

105.5

161

91.5

141

4 V

≤ VS ≤ 30 V, 25°C

0.2

Change of quiescent

µA

current(9)

4 V

≤ VS ≤ 30 V

0.5

Temperature

+0.39

+0.7

+0.39

+0.7

coefficient of

µA/°C

quiescent current

Minimum temperature

In circuit of Figure 1, IL = 0

+1.5

°C

for rate accuracy

Long term stability

TJ = TMAX, for 1000 hours

±0.08

°C

(8)

Quiescent current is defined in the circuit of Figure 1.

(9)

Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output due to heating

effects can be computed by multiplying the internal dissipation by the thermal resistance.

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