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IRFS7440PbF bảng dữ liệu(PDF) 3 Page - International Rectifier

tên linh kiện IRFS7440PbF
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IRFS7440PbF bảng dữ liệu(HTML) 3 Page - International Rectifier

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IRFS/SL7440PbF
www.irf.com
3
October 10, 2012
S
D
G
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max. Units
gfs
Forward Transconductance
88
–––
–––
S
Qg
Total Gate Charge
–––
90
135
nC
Qgs
Gate-to-Source Charge
–––
23
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
32
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
58
–––
td(on)
Turn-On Delay Time
–––
24
–––
ns
tr
Rise Time
–––
68
–––
td(off)
Turn-Off Delay Time
–––
115
–––
tf
Fall Time
–––
68
–––
Ciss
Input Capacitance
–––
4730
–––
pF
Coss
Output Capacitance
–––
680
–––
Crss
Reverse Transfer Capacitance
–––
460
–––
Coss eff. (ER)
Effective Output Capacitance (Energy Related)
–––
845
–––
Coss eff. (TR)
Effective Output Capacitance (Time Related)
–––
980
–––
Diode Characteristics
Symbol
Parameter
Min.
Typ.
Max. Units
IS
Continuous Source Current
–––
–––
193
A
(Body Diode)
ISM
Pulsed Source Current
–––
–––
772
A
(Body Diode)
Ãd
VSD
Diode Forward Voltage
–––
0.9
1.3
V
dv/dt
Peak Diode Recovery
f
–––
6.8
–––
V/ns
trr
Reverse Recovery Time
–––
24
–––
ns
TJ = 25°C
VR = 34V,
–––
28
–––
TJ = 125°C
IF = 100A
Qrr
Reverse Recovery Charge
–––
17
–––
nC
TJ = 25°C
di/dt = 100A/μs
g
–––
20
–––
TJ = 125°C
IRRM
Reverse Recovery Current
–––
1.3
–––
A
TJ = 25°C
TJ = 175°C, IS = 100A, VDS = 40V
ID = 30A
RG = 2.7
VGS = 10V g
VDD = 20V
ID = 100A
TJ = 25°C, IS = 100A, VGS = 0V g
integral reverse
p-n junction diode.
MOSFET symbol
showing the
Conditions
VGS = 10V g
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz
ID = 100A, VDS =0V, VGS = 10V
VGS = 0V, VDS = 0V to 32V i
VGS = 0V, VDS = 0V to 32V h
Conditions
VDS = 10V, ID = 100A
VDS =20V



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