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STM32L151VD bảng dữ liệu(PDF) 56 Page - STMicroelectronics

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STM32L151VD bảng dữ liệu(HTML) 56 Page - STMicroelectronics

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Electrical characteristics
STM32L151xD STM32L152xD
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Doc ID 022027 Rev 6
6.3
Operating conditions
6.3.1
General operating conditions
6.3.2
Embedded reset and power control block characteristics
The parameters given in the following table are derived from the tests performed under the
ambient temperature condition summarized in Table 14.
Table 13.
Thermal characteristics
Symbol
Ratings
Value
Unit
TSTG
Storage temperature range
–65 to +150
°C
TJ
Maximum junction temperature
150
°C
Table 14.
General operating conditions
Symbol
Parameter
Conditions
Min
Max
Unit
fHCLK
Internal AHB clock frequency
0
32
MHz
fPCLK1
Internal APB1 clock frequency
0
32
fPCLK2
Internal APB2 clock frequency
0
32
VDD
Standard operating voltage
BOR detector disabled
1.65
3.6
V
BOR detector enabled,
at power on
1.8
3.6
BOR detector disabled,
after power on
1.65
3.6
VDDA
(1)
1.
When the ADC is used, refer to Table 64: ADC characteristics.
Analog operating voltage
(ADC and DAC not used)
Must be the same voltage
as VDD
(2)
2.
It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV
between VDD and VDDA can be tolerated during power-up and operation.
1.65
3.6
V
Analog operating voltage
(ADC or DAC used)
1.8
3.6
P
D
Power dissipation at
TA = 85 °C
(3)
3.
If TA is lower, higher PD values are allowed as long as TJ does not exceed TJ max (see Table 78: Thermal
characteristics on page 134).
UFBGA132 package
333
mW
TA
Temperature range
Maximum power dissipation
–40
85
°C
Low power dissipation(4)
4.
In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJ max
(see Table 78: Thermal characteristics on page 134).
–40
105
TJ
Junction temperature range
-40 °C
≤ TA ≤ 105 °C
–40
105
°C



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