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STM32F217VE bảng dữ liệu(PDF) 67 Page - STMicroelectronics

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STM32F217VE bảng dữ liệu(HTML) 67 Page - STMicroelectronics

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STM32F21xxx
Electrical characteristics
Doc ID 17050 Rev 8
67/173
5.3.5
Embedded reset and power control block characteristics
The parameters given in Table 16 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 11.
Table 16.
Embedded reset and power control block characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VPVD
Programmable voltage
detector level selection
PLS[2:0]=000 (rising
edge)
2.09
2.14
2.19
V
PLS[2:0]=000 (falling
edge)
1.98
2.04
2.08
V
PLS[2:0]=001 (rising
edge)
2.23
2.30
2.37
V
PLS[2:0]=001 (falling
edge)
2.13
2.19
2.25
V
PLS[2:0]=010 (rising
edge)
2.39
2.45
2.51
V
PLS[2:0]=010 (falling
edge)
2.29
2.35
2.39
V
PLS[2:0]=011 (rising
edge)
2.54
2.60
2.65
V
PLS[2:0]=011 (falling
edge)
2.44
2.51
2.56
V
PLS[2:0]=100 (rising
edge)
2.70
2.76
2.82
V
PLS[2:0]=100 (falling
edge)
2.59
2.66
2.71
V
PLS[2:0]=101 (rising
edge)
2.86
2.93
2.99
V
PLS[2:0]=101 (falling
edge)
2.65
2.84
3.02
V
PLS[2:0]=110 (rising
edge)
2.96
3.03
3.10
V
PLS[2:0]=110 (falling
edge)
2.85
2.93
2.99
V
PLS[2:0]=111 (rising
edge)
3.07
3.14
3.21
V
PLS[2:0]=111 (falling
edge)
2.95
3.03
3.09
V
VPVDhyst
(2)
PVD hysteresis
-
100
-
mV
VPOR/PDR
Power-on/power-down
reset threshold
Falling edge
1.60(1)
1.68
1.76
V
Rising edge
1.64
1.72
1.80
V
VPDRhyst
(2)
PDR hysteresis
-
40
-
mV



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