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STM32F107RB bảng dữ liệu(PDF) 36 Page - STMicroelectronics

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STM32F107RB bảng dữ liệu(HTML) 36 Page - STMicroelectronics

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Electrical characteristics
STM32F105xx, STM32F107xx
36/104
Doc ID 15274 Rev 6
5.3.2
Operating conditions at power-up / power-down
Subject to general operating conditions for TA.
Table 10.
Operating conditions at power-up / power-down
5.3.3
Embedded reset and power control block characteristics
The parameters given in Table 11 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 9.
Symbol
Parameter
Conditions
Min
Max
Unit
tVDD
VDD rise time rate
0
µs/V
VDD fall time rate
20
Table 11.
Embedded reset and power control block characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VPVD
Programmable voltage
detector level selection
PLS[2:0]=000 (rising edge)
2.1
2.18
2.26
V
PLS[2:0]=000 (falling edge)
2
2.08
2.16
V
PLS[2:0]=001 (rising edge)
2.19
2.28
2.37
V
PLS[2:0]=001 (falling edge)
2.09
2.18
2.27
V
PLS[2:0]=010 (rising edge)
2.28
2.38
2.48
V
PLS[2:0]=010 (falling edge)
2.18
2.28
2.38
V
PLS[2:0]=011 (rising edge)
2.38
2.48
2.58
V
PLS[2:0]=011 (falling edge)
2.28
2.38
2.48
V
PLS[2:0]=100 (rising edge)
2.47
2.58
2.69
V
PLS[2:0]=100 (falling edge)
2.37
2.48
2.59
V
PLS[2:0]=101 (rising edge)
2.57
2.68
2.79
V
PLS[2:0]=101 (falling edge)
2.47
2.58
2.69
V
PLS[2:0]=110 (rising edge)
2.66
2.78
2.9
V
PLS[2:0]=110 (falling edge)
2.56
2.68
2.8
V
PLS[2:0]=111 (rising edge)
2.76
2.88
3
V
PLS[2:0]=111 (falling edge)
2.66
2.78
2.9
V
VPVDhyst
(2)
PVD hysteresis
100
mV
VPOR/PDR
Power on/power down
reset threshold
Falling edge
1.8(1)
1.
The product behavior is guaranteed by design down to the minimum VPOR/PDR value.
1.88
1.96
V
Rising edge
1.84
1.92
2.0
V
VPDRhyst
(2)
PDR hysteresis
40
mV
TRSTTEMPO
(2)
2.
Guaranteed by design, not tested in production.
Reset temporization
1
2.5
4.5
ms



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