42

AmC0XXCFLKA

5/4/98

DATA SHEET SUMMARY FOR AMC0XXCFLKA

PIN DESCRIPTION

Added description for REG pin.

Table 3. Even Byte Command Definitions

Each density card now has a list of paired segment

numbers. The address increment for Even bytes should

be (N/2) * 100000H.

Added Note 5 for clarification. Note 3 requires use of

CE1, not CE2, and A21. Note 2 was clarified.

Table 4. Odd Byte Command Definitions

Each density card now has a list of paired segment

numbers. The address increment for Even bytes should

be (N-1/2) * 100000H + 80000H.

Added Note 5 for clarification. Note 3 requires use of

CE2, not CE1, and A21. Note 2 was clarified.

Autoselect operation data is A4h.

Table 5. Word Command Definitions

Added Note 7 for clarification. Note 3 requires use of

CE1 and CE2 and A21. Note 5 was modified to reflect

that the address should be (Addr) + M * (100000H).

Note 2 was clarified.

Autoselect operation data is 0101/A4A4h.

Sector Erase

Clarified that any sector number can be loaded into the

sector erase buffer.

Toggle Bit—D6

Added clarification that D6 is used for entering Sector

Erase Suspend mode.

Sector Erase Suspend

Repeated sentence was deleted.

Write Operation Status Table

D3 in ‘Exceeded Time Limit’ mode is 0.

Figure 5. AC Waveforms for Data Polling During

Embedded Algorithm Operations

reference.

Figure 6. AC Waveforms for Toggle Bit During

Embedded Algorithm Operations

Clarified diagram.

Embedded Algorithm Flow Charts

Figures 6, 7, 11 references to 14

µs time outs were cor-

rected to 16

µs.

DC Characteristics—Byte-Wide Operation

Note 1 has been modified to show standby current is in-

creased by: 19 mA for 10 Mb, 7 mA for 4 Mb, 3 mA for

2Mb and 1 mA for 1 Mb card in TTL modes.

DC Characteristics—Word-Wide Operation

has been modified to show standby current is in-

creased by: 18 mA for 10 Mb, 6 mA for 4 Mb, and 2 mA

for 2 Mb card in TTL modes.

AC Characteristics—Write/Erase/Program

Operations

fied to exclude the statement regarding preprogram-

ming time.

Figure 19. AC Waveforms for Byte Write Operations

changed to AAAAh according to the Byte Write se-

quence. Added t.

AC Characteristics—Alternate CE Controlled

Writes—Write/Erase/Program Operations

fied to exclude the statement regarding preprogram-

ming time.

Figure 20. Alternate CE Controlled Byte Write

Operation Timings

Table 10. AMD’s CIS for AmC0XXCFLKA

Removed bracketed reference for Tuple Address 04h.

Tuple Address 32h now reflects CIS memory speed of

250 ns (3Ah).

Revision B+1

Sector Erase Suspend

Removed the statement requiring the address of a sec-

tor not being erased for valid D6 status.

Trademarks

Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.

AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.

Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.