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LM3410XMFE bảng dữ liệu(PDF) 20 Page - Texas Instruments

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LM3410XMFE bảng dữ liệu(HTML) 20 Page - Texas Instruments

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VFB
2
RSET
PRSET =
D
2
x
x
=
RDSON
¸¸
¹
·
¨¨
©
§
D'
P
NFET
-
COND
ILED
Isw-rms = IIND D
1 +
'i
IIND
1
3
2
x
D
IIND
|
t
'i
IIN
ISW(t)
LM3410, LM3410Q
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
www.ti.com
Figure 23. LM3410 Switch Current
(27)
(small ripple approximation)
PCOND-NFET = IIN
2 x R
DSON x D
(28)
Or
(29)
The value for RDSON should be equal to the resistance at the junction temperature you wish to analyze. As an
example, at 125°C and RDSON = 250 mΩ (See typical graphs for value).
Switching losses are also associated with the internal power switch. They occur during the switch on and off
transition periods, where voltages and currents overlap resulting in power loss.
The simplest means to determine this loss is to empirically measuring the rise and fall times (10% to 90%) of the
switch at the switch node:
PSWR = 1/2(VOUT x IIN x fSW x tRISE)
(30)
PSWF = 1/2(VOUT x IIN x fSW x tFALL)
(31)
PSW = PSWR + PSWF
(32)
Table 4. Typical Switch-Node Rise and Fall Times
VIN
VOUT
tRISE
tFALL
3V
5V
6nS
4nS
5V
12V
6nS
5nS
3V
12V
8nS
7nS
5V
18V
10nS
8nS
Quiescent Power Losses
IQ is the quiescent operating current, and is typically around 1.5 mA.
PQ = IQ x VIN
(33)
RSET Power Loss
(34)
Example Efficiency Calculation:
Operating Conditions:
5 x 3.3V LEDs + 190mVREF ≊ 16.7V
(35)
20
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Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM3410 LM3410Q



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