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SSM3J331R bảng dữ liệu(PDF) 3 Page - Toshiba Semiconductor

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SSM3J331R
3
5.
5.
5.
5. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
5.1.
5.1.
5.1.
5.1. Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
Static Characteristics (Taaaa = 25
= 25
= 25
= 25
 unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Forward transfer admittance
(Note 1)
(Note 2)
(Note 3)
(Note 3)
Symbol
IGSS
IDSS
V(BR)DSS
V(BR)DSX
Vth
RDS(ON)
|Yfs|
Test Condition
VGS = ±8 V, VDS = 0 V
VDS = -20 V, VGS = 0 V
ID = -1 mA, VGS = 0 V
ID = -1 mA, VGS = 5 V
VDS = -3 V, ID = -1 mA
ID = -3.0 A, VGS = -4.5 V
ID = -3.0 A, VGS = -2.5 V
ID = -1.0 A, VGS = -1.8 V
ID = -0.5 A, VGS = -1.5 V
VDS = -3 V, ID = -1.0 A
Min
-20
-15
-0.3
3.6
Typ.
46
58
70
85
7.2
Max
±1
-1
-1.0
55
75
100
150
Unit
µA
V
mΩ
S
Note 1: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-
source breakdown voltage is lowered in this mode.
Note 2: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (-1 mA for
this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be
lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON).
Take this into consideration when using the device.
Note 3: Pulse measurement.
5.2.
5.2.
5.2.
5.2. Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (Taaaa = 25
= 25
= 25
= 25
 unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (turn-on time)
Switching time (turn-off time)
Symbol
Ciss
Crss
Coss
ton
toff
Test Condition
VDS = -10 V, VGS = 0 V,
f = 1 MHz
VDD = -10 V, ID = -0.5 A
VGS = 0 to -2.5 V, RG = 4.7 Ω,
Duty ≤ 1%, Input: tr, tf < 5 ns
Common source, See Chapter 5.3
Min
Typ.
630
60
75
14
68
Max
Unit
pF
ns
5.3.
5.3.
5.3.
5.3. Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Fig.
Fig.
Fig.
Fig. 5.3.1
5.3.1
5.3.1
5.3.1 Test Circuit of Switching Time
Test Circuit of Switching Time
Test Circuit of Switching Time
Test Circuit of Switching Time
Fig.
Fig.
Fig.
Fig. 5.3.2
5.3.2
5.3.2
5.3.2 Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
2012-07-19
Rev.3.0



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