SSM3J331R

2

4.

4.

4.

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

= 25

= 25

= 25





))))

Characteristics

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

Power dissipation

Channel temperature

Storage temperature

(t ≤ 10 s)

(Note 1)

(Note 1,2)

(Note 3)

(Note 3)

Symbol

Rating

-20

±8

-4.0

-10

1

2

150

-55 to 150

Unit

V

A

W

W



Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Ensure that the channel temperature does not exceed 150.

Note 2: Pulse width (PW) ≤ 10 ms, duty ≤ 1%

Note:

The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,

operators, soldering irons and other objects should be protected against anti-static discharge.

Note:

board material, board area, board thickness and pad area. When using this device, be sure to take heat

dissipation fully into account.

2012-07-19

Rev.3.0