M95160-R datasheet(33/47 Pages) STMICROELECTRONICS

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M95160 M95160-W M95160-R M95160-DF

DC and AC parameters

Figure 19. AC measurement I/O waveform

Table 11. AC measurement conditions

Symbol

Parameter

Min.

Max.

Unit

Load capacitance

Input rise and fall times

Input pulse voltages

0.2 VCC to 0.8 VCC

Input and output timing reference voltages

0.3 VCC to 0.7 VCC

Table 12. Cycling performance

Symbol

Parameter(1)

1. Cycling performance for products identified by process letter K.

Test conditions

Min.

Max.

Unit

Ncycle

Write cycle endurance

≤ 25 °C,

VCC(min) < VCC < VCC(max)

4,000,000

Write cycle

TA = 85 °C,

VCC(min) < VCC < VCC(max)

1,200,000

Table 13. Memory cell data retention

Parameter

Test conditions

Min.

Unit

Data retention(1)

1. For products identified by process letter K. The data retention behavior is checked in production, while the

200-year limit is defined from characterization and qualification results.

TA = 55 °C

200

Year

Table 14. Capacitance

Symbol

Parameter

Test conditions(1)

1. Sampled only, not 100% tested, at TA = 25 °C and a frequency of 5 MHz.

Min.

Max.

Unit

COUT

Output capacitance (Q)

VOUT = 0 V

CIN

Input capacitance (D)

VIN = 0 V

Input capacitance (other pins)

VIN = 0 V

AI00825C

0.8 VCC

0.2 VCC

0.7 VCC

0.3 VCC

Input and output

timing reference levels

Input voltage levels

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