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STM32F100C bảng dữ liệu(PDF) 52 Page - STMicroelectronics |
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STM32F100C bảng dữ liệu(HTML) 52 Page - STMicroelectronics |
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52 / 98 page ![]() Electrical characteristics STM32F100xC, STM32F100xD, STM32F100xE 52/98 Doc ID 15081 Rev 7 Figure 14. Typical application with a 32.768 kHz crystal 5.3.7 Internal clock source characteristics The parameters given in Table 24 are derived from tests performed under the ambient temperature and VDD supply voltage conditions summarized in Table 9. High-speed internal (HSI) RC oscillator Low-speed internal (LSI) RC oscillator ai14129b OSC32_OU T OSC32_IN fLSE CL1 RF STM32F10xxx 32.768 KH z resonator Resonator with integrated capacitors Bias controlled gain CL2 Table 24. HSI oscillator characteristics(1) 1. VDD = 3.3 V, TA = –40 to 105 °C °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency 8 MHz ACCHSI Accuracy of HSI oscillator TA = –40 to 105 °C (2) 2. Based on characterization, not tested in production. -2.4 2.5 % TA = –10 to 85 °C (2) -2.2 1.3 % TA = 0 to 70 °C (2) -1.9 1.3 % TA = 25 °C -1 1 % tsu(HSI) (3) 3. Guaranteed by design. Not tested in production HSI oscillator startup time 1 2 µs IDD(HSI) (3) HSI oscillator power consumption 80 100 µA Table 25. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = –40 to 105 °C °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI Frequency 30 40 60 kHz tsu(LSI) (2) 2. Guaranteed by design, not tested in production. LSI oscillator startup time 85 µs IDD(LSI) (2) LSI oscillator power consumption 0.65 1.2 µA |
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