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RB520CS30L bảng dữ liệu(PDF) 8 Page - NXP Semiconductors

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Giải thích chi tiết về linh kiện  100 mA low VF MEGA Schottky barrier rectifier
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RB520CS30L bảng dữ liệu(HTML) 8 Page - NXP Semiconductors

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RB520CS30L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 10 March 2011
8 of 14
NXP Semiconductors
RB520CS30L
100 mA low VF MEGA Schottky barrier rectifier
8.
Test information
The current ratings for the typical waveforms as shown in Figure 9, 10 and 11 are
calculated according to the equations:
with IM defined as peak current,
at DC, and
with IRMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Tj = 150 °C
(1)
δ =1; DC
(2)
δ = 0.5; f = 20 kHz
(3)
δ = 0.2; f = 20 kHz
(4)
δ = 0.1; f = 20 kHz
Fig 11. Average forward current as a function of solder point temperature; typical values
Tsp (°C)
0
50
100
150
175
125
75
25
006aac543
0.05
0.10
0.15
IF(AV)
(A)
0.00
(1)
(2)
(3)
(4)
Fig 12. Duty cycle definition
t1
t2
P
t
006aaa812
duty cycle
δ =
t1
t2
I
FAV
()
I
M
δ
×
=
I
RMS
I
FAV
()
=
I
RMS
I
M
δ
×
=



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