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MT46V64M4 bảng dữ liệu(PDF) 39 Page - Micron Technology |
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MT46V64M4 bảng dữ liệu(HTML) 39 Page - Micron Technology |
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39 / 91 page ![]() PDF: 09005aef80768abb/Source: 09005aef82a95a3a Micron Technology, Inc., reserves the right to change products or specifications without notice. DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. S, Core DDR: Rev. E 9/12 EN 39 ©2003 Micron Technology, Inc. All rights reserved. 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and AC 39d. The driver pull-up current variation, within nominal voltage and temperature limits, is expected, but not guaranteed, to lie within the inner bounding lines of the V-I curve of Figure 7 on page 39. 39e. The full ratio variation of the MAX-to-MIN pull-up and pull-down current should be between 0.71 and 1.4 for device drain-to-source voltages from 0.1V to 1.0V at the same voltage and temperature. 39f. The full ratio variation of the nominal pull-up to pull-down current should be unity ±10%, for device drain-to-source voltages from 0.1V to 1.0V. Figure 6: Reduced Drive Pull-Down Characteristics Figure 7: Reduced Drive Pull-Up Characteristics 40. The voltage levels used are derived from a minimum VDD level and the referenced test load. In practice, the voltage levels obtained from a properly terminated bus will pro- vide significantly different voltage values. 41. VIH overshoot: VIH,max =VDDQ +1.5V for a pulse width 3ns, and the pulse width can not be greater than 1/3 of the cycle rate. VIL undershoot: VIL,min = –1.5V for a pulse width 3ns, and the pulse width can not be greater than 1/3 of the cycle rate. 42. VDD and VDDQ must track each other. 43. tHZ (MAX) will prevail over tDQSCK (MAX) + tRPST (MAX) condition. tLZ (MIN) will prevail over tDQSCK (MIN) + tRPRE (MAX) condition. 0 10 20 30 40 50 60 70 80 0.00.5 1.01.5 2.0 2.5 V OUT (V) -80 -70 -60 -50 -40 -30 -20 -10 0 0.0 0.5 1.0 1.5 2.0 2.5 V DDQ - VOUT (V) |
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