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FX3 bảng dữ liệu(PDF) 23 Page - Cypress Semiconductor

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CYUSB301X
Document Number: 001-52136 Rev. *N
Page 23 of 45
VOL
Output LOW voltage
–
0.1 × VCC
V
IOL (min) = +100 µA tested at quarter
drive strength. VCC is the corresponding
I/O voltage supply.
IIX
Input leakage current for all pins except
SSTXP/SSXM/SSRXP/SSRXM
–1
1
µA
All I/O signals held at VDDQ
(For I/Os with a pull-up or pull-down
resistor connected, the leakage current
increases by VDDQ/Rpu or VDDQ/RPD
IOZ
Output High-Z leakage current for all pins
except SSTXP/ SSXM/ SSRXP/SSRXM
–1
1
µA
All I/O signals held at VDDQ
ICC Core
Core and analog voltage operating
current
–
200
mA
Total current through AVDD, VDD
ICC USB
USB voltage supply operating current
–
60
mA
ISB1
Total suspend current during suspend
mode with USB 3.0 PHY enabled (L1)
–
–
mA
Core current: 1.5 mA
I/O current: 20 µA
USB current: 2 mA
For typical PVT (typical silicon, all power
supplies at their respective nominal
levels at 25 °C.)
ISB2
Total suspend current during suspend
mode with USB 3.0 PHY disabled (L2)
–
–
mA
Core current: 250 µA
I/O current: 20 µA
USB current: 1.2 mA
For typical PVT (Typical silicon, all power
supplies at their respective nominal
levels at 25 °C.)
ISB3
Total standby current during standby
mode (L3)
–
–
µA
Core current: 60 µA
I/O current: 20 µA
USB current: 40 µA
For typical PVT (typical silicon, all power
supplies at their respective nominal
levels at 25 °C.)
ISB4
Total standby current during core
power-down mode (L4)
–
–
µA
Core current: 0 µA
I/O current: 20 µA
USB current: 40 µA
For typical PVT (typical silicon, all power
supplies at their respective nominal
levels at 25 °C.)
VRAMP
Voltage ramp rate on core and I/O
supplies
0.2
50
V/ms Voltage ramp must be monotonic
VN
Noise level permitted on VDD and I/O
supplies
–
100
mV
Max p-p noise level permitted on all
supplies except AVDD
VN_AVDD
Noise level permitted on AVDD supply
–
20
mV
Max p-p noise level permitted on AVDD
DC Specifications (continued)
Parameter
Description
Min
Max
Units
Notes



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