M24256-DRMN6TP datasheet(27/40 Pages) STMICROELECTRONICS

27 / 40 page

M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF

DC and AC parameters

Doc ID 6757 Rev 30

27/40

Table 15.

DC characteristics (M24256-BF, M24256-DF, device grade 6)

Symbol

Parameter

Test conditions(1) (in addition

to those in Table 8)

If the application uses the voltage range F device with 2.5 V < VCC < 5.5 V and -40 °C < TA < +85 °C,

please refer to Table 13 instead of this table.

Min.

Max.

Unit

ILI

Input leakage current

(E1, E2, SCL, SDA)

VIN = VSS or VCC

device in Standby mode

-± 2

µA

ILO

Output leakage current

SDA in Hi-Z, external voltage

applied on SDA: VSS or VCC

-± 2

µA

ICC

Supply current (Read)

VCC = 1.7 V, fc= 400 kHz

0.8

fc= 1 MHz

(2)

Only for devices identified by process letter K (see Table 17).

-2.5

ICC

Supply current (Read)

VCC = 1.6 V, fc= 400 kHz

0.8

ICC0

Supply current (Write)

During tW 1.7 V < VCC < 2.5 V

2(3)

Characterized value, not tested in production.

ICC1

Standby supply current

Device not selected(4),

VIN = VSS or VCC, VCC = 1.7 V

The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the

completion of the internal write cycle tW (tW is triggered by the correct decoding of a Write instruction).

-1

µA

VIL

Input low voltage

(SCL, SDA, WC)

1.7 V

≤ VCC < 2.5 V

–0.45

0.25 VCC

VIH

Input high voltage

(SCL, SDA)

1.7 V

≤ VCC < 2.5 V

0.75 VCC

6.5

Input high voltage

(WC, E2, E1, E0)

1.7 V

≤ VCC < 2.5 V

0.75 VCC VCC+0.6

VOL

Output low voltage

IOL = 1 mA, VCC = 1.7 V

0.2

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