EVALUATIONBOARD datasheet(5/16 Pages) INTERSIL

5 / 16 page

ISL75052SEH

FN8456.0

May 29, 2013

Absolute Maximum Ratings

Thermal Information

VIN Relative to GND without ion beam (Note 2) . . . . . . . . . . -0.3 to +16.0V

VIN Relative to GND under ion beam (Note 2) . . . . . . . . . . . -0.3 to +14.7V

VOUT Relative to GND (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +14.7V

PG,EN,OCP/ADJ,COMP,REFIN,REFOUT relative to GND (Note 2) . . . -0.3 to

+6.5VDC

Recommended Operating Conditions (Notes 3)

Ambient Temperature Range (TA) . . . . . . . . . . . . . . . . . . .-55°C to +125°C

Junction Temperature (TJ) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . .+150°C

VIN Relative to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V to 13.2V

VOUT Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2.5V to 12.7V

PG, EN, OCP/ADJ relative to GND . . . . . . . . . . . . . . . . . . . . . . . .0V to +5.5V

Thermal Resistance (Typical)

θJA (°C/W)

θJC (°C/W)

16 Ld CDFP Package (Notes 5, 6) . . . . . . .

4.5

Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C

Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below

http://www.intersil.com/pbfree/Pb-FreeReflow.asp

Radiation Information

Maximum Total Dose

High Dose(Dose Rate = 50 - 300radSi/s) . . . . . . . . . . . .100 krads (Si)

Low Dose(Dose Rate = 10milliradSi/s) (Note 4) . . . . . . 100 krads (Si)

SET (VOUT within ±5% During Events . . . . . . . . . . . . . . . .86MeV/mg/cm2

SEL/B (No Latchup/Burnout . . . . . . . . . . . . . . . . . . . . . . . . 86MeV/mg/cm2

The output capacitance used for SEE testing is 2x100µF for CIN and COUT,

100nF for BYPASS

CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product

reliability and result in failures not covered by warranty.

NOTES:

2. Extended operation at these conditions may compromise reliability. Exceeding these limits will result in damage. Recommended operating conditions

define limits where specifications are guaranteed.

3. Refer to “Bottom Metal Mounting Guidelines” on page 8.

4. Product capability established by initial characterization. The "EH" version is acceptance tested on a wafer by wafer basis to 50 krad(Si) at low dose

rate.

5. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See

TechBrief TB379

6. For

θJC, the “case temp” location is the center of the exposed metal pad on the package underside.

7. Electromigration specification defined as lifetime average junction temperature of +150°C where max rated DC current = lifetime average current.

Electrical Specifications Unless otherwise noted, all parameters are guaranteed over the following specified conditions:

VIN =VOUT +0.5V, VOUT = 4.0V, CIN = COUT = 2x100µF 60mΩ, KEMET type T541X107N025AH or equivalent, TJ = +25°C, IL = 0A. Applications must follow

thermal guidelines of the package to determine worst case junction temperature. Please refer to “Applications Information” on page 7 of the data sheet

and Tech Brief TB379. Boldface limits apply over the operating temperature range, -55°C to +125°C. Pulse load techniques used by ATE to ensure TJ =TA

defines guaranteed limits.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

(Note 8)

TYP

MAX

(Note 8)

UNITS

DC CHARACTERISTICS

DC Output Voltage Accuracy

VOUT

VOUT Resistor adjust to: 2.5V and 5.0V

VOUT = 2.5V, 4.0V < VIN < 5.0V; 0A < ILOAD < 1.5A,

TJ = -55°C to +125°C

-1.5

0.2

1.5

VOUT = 2.5V, 4.0V < VIN < 5.0V; 0A < ILOAD < 1.5A,

TJ = +25°C, Post Rad.

-2.0

0.2

2.0

VOUT = 5.0V, 5.5V < VIN < 6.9V; 0A < ILOAD < 1.5A,

TJ = -55°C to +125°C

-1.5

0.2

1.5

VOUT = 5.0V, 5.5V < VIN < 6.9V, 0A < ILOAD < 1.5A,

TJ = +25°C, Post Rad.

-2.0

0.2

2.0

VOUT Resistor adjust to: 10.0V

VOUT = 10.0V, 10.5V < VIN < 13.2V, ILOAD = 0A,

TJ =-55°C to +125°C

-1.5

0.2

1.5

VOUT = 10.0V, 10.5V < VIN < 13.2V, ILOAD = 0A,

TJ = +25°C, Post Rad.

-2.0

0.2

2.0

VOUT = 10.0V, VIN = 10.5V, ILOAD = 1.5A, VIN =13.2V,

ILOAD = 1.0A, TJ = -55°C to +125°C

-1.5

0.2

1.5

VOUT = 10.0V, VIN = 10.5V; ILOAD =1.5A, VIN =13.2V,

ILOAD = 1.0A, TJ = +25°C, Post Rad.

-2.0

0.2

2.0

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