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DSA30C200PB bảng dữ liệu(PDF) 1 Page - IXYS Corporation |
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DSA30C200PB bảng dữ liệu(HTML) 1 Page - IXYS Corporation |
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1 / 3 page ![]() DSA 30 C 200 PB advanced Schottky Diode Gen ² Symbol Definition R a t i n g s Features / Advantages: typ. max. I FSM I R A V 120 I A V F 0.94 R 1.75 K/W V R = 1 2 3 min. 15 t = 10 ms Applications: VRRM V 200 0.25 T VJ V°C = T VJ °C =mA 2.5 Package: Part number V R = T VJ =°C I F =A V TC = 150°C d = P tot 85 W TC °C = T VJ 175 °C -55 V I RRM = = 200 15 15 T VJ = 45°C DSA 30 C 200 PB V A 200 V 200 25 25 25 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current Conditions Unit 1.10 TVJ °C =25 C J junction capacitance V= V; 24 T 125 V F0 V 0.53 T VJ = 175°C rF 10.8 Ω f = 1 MHz = °C 25 m V 0.78 TVJ =°C IF =A V 15 0.95 I F =A 30 IF =A 30 2x threshold voltage slope resistance for power loss calculation only Backside: cathode (50 Hz), sine V F = 0.78 V ● Housing: High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode TO-220 ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant R VJ mA 67 pF thermal resistance junction to case thJC rectangular 0.5 ● Very low Vf ● Extremely low switching losses ● low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters FAV average forward current FAV 125 IXYS reserves the right to change limits, conditions and dimensions. 20100628 Data according to IEC 60747and per diode unless otherwise specified © 2010 IXYS all rights reserved |
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