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AP60T03AS bảng dữ liệu(PDF) 1 Page - Advanced Power Electronics Corp.

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nhà sản xuất  A-POWER [Advanced Power Electronics Corp.]
Trang chủ  http://www.a-power.com.tw
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AP60T03AS bảng dữ liệu(HTML) 1 Page - Advanced Power Electronics Corp.

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Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼
▼
▼
▼ Simple Drive Requirement
BVDSS
30V
▼
▼
▼
▼ Low Gate Charge
RDS(ON)
12mΩ
▼
▼
▼
▼ Fast Switching
ID
45A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
3.4
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data and specifications subject to change without notice
200909032
AP60T03AS/P
Parameter
Rating
Drain-Source Voltage
30
Gate-Source Voltage
± 20
Continuous Drain Current, VGS @ 10V
45
Continuous Drain Current, VGS @ 10V
32
Pulsed Drain Current
1
120
Total Power Dissipation
44
-55 to 175
Operating Junction Temperature Range
-55 to 175
Linear Derating Factor
0.352
Thermal Data
Parameter
Storage Temperature Range
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP60T03AP) are available for low-profile applications.
TO-263(S)
TO-220(P)


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