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MCP2025-330E/P bảng dữ liệu(PDF) 18 Page - Microchip Technology |
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MCP2025-330E/P bảng dữ liệu(HTML) 18 Page - Microchip Technology |
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18 / 36 page ![]() MCP2025 DS22306A-page 18 2012 Microchip Technology Inc. 2.4 AC Specification AC CHARACTERISTICS VBB = 6.0V to 18.0V; TA = -40°C to +125°C Parameter Sym. Min. Typ. Max. Units Test Conditions Bus Interface - Constant Slope Time Parameters (DC specifications are for a VBB range of 6.0 to 18.0V) Slope rising and falling edges tSLOPE 3.5 — 22.5 µs 7.3V <= VBB <= 18V Propagation Delay of Transmitter tTRANSPD —— 6.0 µs tTRANSPD = max (tTRANSPDR or tTRANSPDF) Propagation Delay of Receiver tRECPD —— 6.0 µs tRECPD = max (tRECPDR or tRECPDF) Symmetry of Propagation Delay of Receiver rising edge w.r.t. falling edge tRECSYM -2.0 — 2.0 µs trecsym = max (trecpdf – trecpdr) RRXD 2.4K to VCC, CRXD 20pF Symmetry of Propagation Delay of Transmitter rising edge w.r.t. falling edge tTRANSSYM -2.0 — 2.0 µs tTRANSSYM = max (tTRANSPDF - tTRANSPDR) Bus dominant time-out time tTO(LIN) —25 — mS Duty Cycle 1 @20.0 kbit/sec .396 — — %tBIT CBUS;RBUS conditions: 1nF; 1 k | 6.8 nF; 660 | 10 nF; 500 THREC(MAX) = 0.744 x VBB, THDOM(MAX) = 0.581 x VBB, VBB =7.0V - 18V; tBIT = 50 µs. D1 = tBUS_REC(MIN) / 2 x tBIT) Duty Cycle 2 @20.0 kbit/sec — — .581 %tBIT CBUS;RBUS conditions: 1nF; 1 k | 6.8 nF; 660 | 10 nF; 500 THREC(MAX) = 0.284 x VBB, THDOM(MAX) = 0.422 x VBB, VBB =7.6V - 18V; tBIT = 50 µs. D2 = tBUS_REC(MAX) / 2 x tBIT) Duty Cycle 3 @10.4 kbit/sec .417 — — %tBIT CBUS;RBUS conditions: 1nF; 1 k | 6.8 nF; 660 | 10 nF; 500 THREC(MAX) = 0.778 x VBB, THDOM(MAX) = 0.616 x VBB, VBB =7.0V - 18V; tBIT = 96 µs. D3 = tBUS_REC(MIN) / 2 x tBIT) Duty Cycle 4 @10.4 kbit/sec — — .590 %tBIT CBUS;RBUS conditions: 1nF; 1 k | 6.8 nF; 660 | 10 nF; 500 THREC(MAX) = 0.251 x VBB, THDOM(MAX) = 0.389 x VBB, VBB =7.6V - 18V; tBIT = 96 µs. D4 = tBUS_REC(MAX) / 2 x tBIT) Note 1: Time depends on external capacitance and load. Test condition: CREG = 4.7uF, no resistor load. 2: For design guidance only, not tested. |
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