SMP04EP datasheet(4/15 Pages) AD

4 / 15 page

–4–

SMP04

REV. D

WAFER TEST LIMITS

SMP04G

Parameter

Symbol

Conditions

Limits

Units

Buffer Offset Voltage

VOS

VIN = +6 V

±10

mV max

Hold Step

VHS

VIN = +6 V

±4

mV max

Droop Rate

∆V/∆tV

IN = +6 V

mV/s max

Output Source Current

ISOURCE

VIN = +6 V

1.2

mA min

Output Sink Current

ISINK

VIN = +6 V

0.5

mA min

Output Voltage Range

OVR

RL = 20 kΩ

0.06/10.0

V min/max

RL = 10 k

Ω

0.06/9.5

V min/max

LOGIC CHARACTERISTICS

Logic Input High Voltage

VINH

2.4

V min

Logic Input Low Voltage

VINL

0.8

V max

Logic Input Current

IIN

µA max

SUPPLY CHARACTERISTICS

Power Supply Rejection Ratio

PSRR

10.8 V

≤ V

≤ 13.2 V

dB min

Supply Current

IDD

mA max

Power Dissipation

PDIS

mW max

NOTE

Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed

for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

(@ VDD = +12 V, VSS = DGND = 0 V, RL = No Load, TA = +25 C, unless otherwise noted.)

VOUT3

VOUT1

VOUT2

VOUT4

VIN1

VIN2

VIN3

VIN4

S/H1

S/H3

S/H4

DGND

VSS

VDD

S/H2

Dice Characteristics

Die Size: 0.80 x 0.120 mil = 9,600 sq. mil

(2.032 x 3.048mm = 6.193 sq. mm)

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