AOC2802 datasheet(2/5 Pages) AOSMD

2 / 5 page

Symbol

Min

Typ

Max

Units

BVSSS

TJ=55°C

IGSS

BVGSO

±12

VGS(th)

0.5

1.5

TJ=125°C

gFS

VFSS

0.6

Ciss

1000

1200

Coss

152

Crss

114

1.5

Ω

tD(on)

284

900

tD(off)

µs

4.8

µs

10.4

Note: Pulsed

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Turn-On Rise Time

Turn-Off DelayTime

Reverse Transfer Capacitance

Gate resistance

VGS=0V, VSS=10V, f=1MHz,

VGS=4.0V, IS=3A, Test Circuit 4

Diode Forward Voltage

Note

Ω

Total Gate Charge

VG1S1=4.5V, VSS=10V, IS=6A

Turn-Off Fall Time

Input Capacitance

Output Capacitance

Turn-On DelayTime

VSS=VGS IS=250µA, Test Circuit 3

VSS=20V, VGS=0V, Test Circuit 1

VGS=2.5V, IS=3A, Test Circuit 4

VGS=4.5V, IS=3A, Test Circuit 4

VGS=10V, VSS=10V, RL=1.5Ω, RGEN=6Ω ,

VGS=3.1V, IS=3A, Test Circuit 4

IS=1A,VGS=0V, Test Circuit 5

VSS=5V, IS=3A, Test Circuit 3

DYNAMIC PARAMETERS

VSS=0V, VGS= ±10V, Test Circuit 2

Source-Source Breakdown Voltage

IS=250µA, VGS=0V, Test Circuit 6

SWITCHING PARAMETERS

VGS=0V, VSS=0V, f=1MHz

Zero Gate Voltage Source Current

Gate leakage current

Forward Transconductance

Note

RSS(ON)

Gate-Source Breakdown Voltage

VSS=0V, IG=±250µA, Test Circuit 7

Static Source to Source On-Resistance

Note

Gate Threshold Voltage

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

µA

ISSS

Rev 4: Nov 2012

www.aosmd.com

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