PXR40 datasheet(63/100 Pages) FREESCALE

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Electrical characteristics

PXR40 Microcontroller Data Sheet, Rev. 1

Freescale Semiconductor

Weak Pull-Up/Down Resistance23, 200 K Option

RPUPD200K

130

280



Weak Pull-Up/Down Resistance23, 100 K Option

RPUPD100K

140



Weak Pull-Up/Down Resistance23, 5 K Option

RPUPD5K

1.4

7.5



Pull-Up/Down Resistance Matching Ratios24

(100K/200K)

RPUPDMTCH

–2.5

+2.5

1 Voltage overshoots during a high-to-low or low-to-high transition must not exceed 10 seconds per instance.

2 2.0 V for 10 hours cumulative time, 1.2 V +10% for time remaining.

3 Assumed with DC load.

4 5.3 V for 10 hours cumulative time, 3.3 V +10% for time remaining.

5 6.4 V for 10 hours cumulative time, 5.0 V +10% for time remaining.

6 V

STBY below 0.95 V the RAM will not retain states, but will be operational. VSTBY can be 0 V when bypass standby mode.

7 Regulator is functional with derated performance, with supply voltage down to 4.0 V for system with V

DDREG = 4.5 V (min).

8 2.7 V minimum operating voltage allowed during vehicle crank for system with V

DDREG = 3.0 V (min). Normal operating voltage

should be either VDDREG = 3.0 V (min) or 4.5 V (min) depending on the user regulation voltage system selected.

9 Required to be supplied when 3.3 V regulator is disabled. See Section 5.5 PMC/POR/LVI electrical specifications.

10 I

OH_F = {16,32,47,77} mA and IOL_F = {24,48,71,115} mA for {00,01,10,11} drive mode with VDDE = 3.0 V. This spec is for

characterization only.

11 I

OH_S = {11.6} mA and IOL_S = {17.7} mA for {medium} I/O with VDDE =4.5 V;

IOH_S = {5.4} mA and IOL_S = {8.1} mA for {medium} I/O with VDDE = 3.0 V. These specs are for characterization only.

12 Applies to D_CLKOUT, external bus pins, and Nexus pins.

13 V

STBY current specified at 1.0 V at a junction temperature of 85

oC. V

STBY current is 700 µA maximum at a junction temperature

of 150 oC.

14 Preliminary. Specification pending typical and/or high-use Runidd pattern simulation as well as final silicon characterization.

900 mA based on transistor count estimate at Worst Case (wcs) process and temperature condition.

15 Power requirements for the V

DD33 supply depend on the frequency of operation and load of all I/O pins, and the voltages on

the I/O segments. See Section 5.7.2 I/O pad VDD33 current specifications, for information on both fast (F, FS) and medium (MH)

pads. Also refer to Table 13 for values to calculate power dissipation for specific operation.

16 This value is a target that is subject to change.

17 This value allows a 5 V reference to supply ADC + REF.

18 Power requirements for each I/O segment depend on the frequency of operation and load of the I/O pins on a particular I/O

segment, and the voltage of the I/O segment. See Section 5.7.1 I/O pad current specifications, for information on I/O pad

power. Also refer to Table 12 for values to calculate power dissipation for specific operation. The total power consumption of

an I/O segment is the sum of the individual power consumptions for each pin on the segment.

19 Absolute value of current, measured at V

IL and VIH.

20 Absolute value of current, measured at V

IL and VIH.

21 Weak pull up/down inactive. Measured at V

DDE = 3.6 V and VDDEH = 5.25 V. Applies to pad types F and MH.

22 Maximum leakage occurs at maximum operating temperature. Leakage current decreases by approximately one-half for each

8to 12 oC, in the ambient temperature range of 50 to 125 oC. Applies to pad types AE and AE/up-down. See Section 4 Signal

properties and muxing.

23 This programmable option applies only to eQADC differential input channels and is used for biasing and sensor diagnostics

24 Pull-up and pull-down resistances are both enabled and settings are equal.

Table 11. DC electrical specifications (continued)

Spec

Characteristic

Symbol

Min

Max

Unit

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