STPS2150_08 datasheet(4/9 Pages) STMICROELECTRONICS

4 / 9 page

Characteristics

STPS2150

4/9

Figure 7.

Non repetitive surge peak forward

current versus overload duration

(maximum values, SMAflat)

Figure 8.

Relative variation of thermal

impedance junction to ambient

versus pulse duration (DO-15)

I(A)

1.E-03

1.E-02

1.E-01

1.E+00

a=25°C

a=75°C

a=125°C

δ =0.5

SMAflat

t(s)

Z/R

th(j-a)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Single pulse

DO-15

t (s)

Figure 9.

Relative variation of thermal

impedance junction to ambient

versus pulse duration (SMA)

Figure 10.

Relative variation of thermal

impedance junction to ambient

versus pulse duration (SMAflat)

Z/R

th(j-a)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Single pulse

SMA

t (s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Single pulse

SMAflat

Z/R

th(j-a)

t (s)

Figure 11.

Reverse leakage current versus

reverse voltage applied

(typical values)

Figure 12.

Junction capacitance versus

reverse voltage applied

(typical values)

I (µA)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

100

125

150

T =125°C

T =150°C

T =100°C

T =50°C

T =25°C

T =75°C

V (V)

C(pF)

100

1000

100

1000

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

STPS2150 bảng dữ liệu(PDF) 4 Page - STMicroelectronics

STPS2150 bảng dữ liệu(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

bảng dữ liệu tải về

Link URL