STPS2150_08 datasheet(3/9 Pages) STMICROELECTRONICS

3 / 9 page

STPS2150

Characteristics

3/9

Figure 1.

Average forward power

dissipation versus average

forward current

Figure 2.

Average forward current versus

ambient temperature (

δ = 0.5)

(W)

F(AV)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

(A)

F(AV)

δ=tp/T

δ = 1

δ = 0.05

δ = 0.5

δ = 0.1

δ = 0.2

(A)

F(AV)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

100

125

150

175

Rth(j-a)=Rth(j-l)

δ=tp/T

Rth(j-a)=100°C/W

SMA / SMAflat

DO-15

Rth(j-a)=200°C/W

(°C)

amb

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(T )

(25°C)

ARM

Figure 5.

Non repetitive surge peak forward

current versus overload duration

(maximum values, DO-15)

Figure 6.

Non repetitive surge peak forward

current versus overload duration

(maximum values, SMA)

I (A)

1.E-03

1.E-02

1.E-01

1.E+00

a=25°C

a=75°C

a=125°C

δ =0.5

DO-15

t(s)

I (A)

1.E-03

1.E-02

1.E-01

1.E+00

a=25°C

a=75°C

a=125°C

δ =0.5

SMA

t(s)

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