STRH40P10

Radiation characteristics

Doc ID 18354 Rev 6

7/18

3

Radiation characteristics

The technology of the STMicroelectronics rad-hard Power MOSFETs is extremely resistant

to radiative environments. Every manufacturing lot is tested for total ionizing dose

(irradiation done according to the ESCC 22900 specification, window 1) using the TO-3

package. Both pre-irradiation and post-irradiation performances are tested and specified

using the same circuitry and test conditions in order to provide a direct comparison.

Total dose radiation (TID) testing

One bias conditions using the TO-3 package:

The following parameters are measured (see

Table 9, Table 10 and Table 11):

●

before irradiation

●

after irradiation

●

after 24 hrs @ room temperature

●

after 168 hrs @ 100 °C anneal

Table 9.

Symbol

Parameter

Test conditions

Drift values

Zero gate voltage drain current

+1

µA

Gate body leakage current

1.5

-1.5

µA

Drain-to-source breakdown

voltage

+5%

V

Gate threshold voltage

+150%

V

Static drain-source on resistance

-4% / +35%

Ω

Table 10.

1.

Parameter not measured after irradiation but guaranteed by the results obtained during the evaluation

Symbol

Parameter

Test conditions

Drift values

Total gate charge

-15% / +5%

nC

Gate-source charge

-5% / +200%

Gate-drain charge

-10% / +100%