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TM4EP72CJB bảng dữ liệu(PDF) 4 Page - Texas Instruments

tên linh kiện TM4EP72CJB
Giải thích chi tiết về linh kiện  EXTENDED-DATA-OUT BUFFERED DYNAMIC RAM MODULES
PDF  13 Pages
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TM4EP72CJB bảng dữ liệu(HTML) 4 Page - Texas Instruments

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TM4EP72BPB, TM4EP72BJB, 4194304 BY 72BIT
TM4EP72CPB, TM4EP72CJB 4194304 BY 72BIT
EXTENDEDDATAOUT BUFFERED DYNAMIC RAM MODULES
SMMS686A − AUGUST 1997 − REVISED FEBRUARY 1998
4
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251−1443
buffered dual-in-line memory module and components
The buffered dual-in-line memory module and components include:
D PC substrate: 1,27 " 0,1 mm (0.05 inch) nominal thickness; 0.005 inch/inch maximum warpage
D Bypass capacitors: Multilayer ceramic
D Contact area: Nickel plate and gold plate over copper
functional block diagram for the TM4EP72xxB
CAS
OE
W
RAS
U0
RAS0
WE0
OE0
CAS0
DQ[0:3]
CAS
OE
W
RAS
UB0
DQ[32:35]
DQ[0:3]
DQ[0:3]
CAS
OE
W
RAS
U1
DQ[4:7]
CAS
OE
W
RAS
UB1
DQ[36:39]
DQ[0:3]
DQ[0:3]
CAS
OE
W
RAS
U2
DQ[8:11]
CAS
OE
W
RAS
UB2
DQ[40:43]
DQ[0:3]
DQ[0:3]
CAS
OE
W
RAS
U3
DQ[12:15]
CAS
OE
W
RAS
UB3
DQ[44:47]
DQ[0:3]
DQ[0:3]
CAS
OE
W
RAS
U4
DQ[16:19]
CAS
OE
W
RAS
UB4
DQ[48:51]
DQ[0:3]
DQ[0:3]
CAS
OE
W
RAS
U5
DQ[20:23]
CAS
OE
W
RAS
UB5
DQ[52:55]
DQ[0:3]
DQ[0:3]
CAS
OE
W
RAS
U6
DQ[24:27]
CAS
OE
W
RAS
UB6
DQ[56:59]
DQ[0:3]
DQ[0:3]
CAS
OE
W
RAS
U7
DQ[28:31]
CAS
OE
W
RAS
UB7
DQ[60:63]
DQ[0:3]
DQ[0:3]
CAS
OE
W
RAS
U8
CB[0:3]
CAS
OE
W
RAS
UB8
CB[4:7]
DQ[0:3]
DQ[0:3]
A0
U[0:8]
B0
UB[0:8]
A[1:n]
A[1:n]: U[0:8], UB[0:8]
VDD
VSS
U[0:8], UB[0:8]
U[0:8], UB[0:8]
Two 0.1
µF (minimum)
per DRAM
RAS2
WE2
OE2
CAS4



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