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139036
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.6 — 10 March 2011
139036
17 of 56
NXP Semiconductors
SL3ICS1002/1202
UCODE G2XM and G2XL
9. Limiting values
[1]
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any conditions other
than those described in the Operating Conditions and Electrical Characteristics section of this specification
is not implied.
[2]
This product includes circuitry specifically designed for the protection of its internal devices from the
damaging effects of excessive static charge. Nonetheless, it is suggested that conventional precautions be
taken to avoid applying greater than the rated maxima.
[3]
For ESD measurement, the die chip has been mounted into a CDIP20 package.
[4]
see also Section 11.1 “Storage conditions”
[5]
see also Section 11.2 “Assembly conditions”
Table 10.
Limiting values[1][2]
In accordance with the Absolute Maximum Rating System (IEC 60134)
Voltages are referenced to RFN
Symbol
Parameter
Conditions
Min
Max
Unit
Die
Tstg
storage temperature range
-55
+125
°C
Toper
operating temperature
-40
+85
°C
VESD
electrostatic discharge voltage
Human body model [3]
-
± 2kV
TSSOP8, SOT1122
Tstg
storage temperature range
-55
+125
°C
Ptot
total power dissipation
-
30
mW
Toper
operating temperature
-40
+85
°C
VESD
electrostatic discharge voltage
Human body model
-
± 2kV
SOT1040AA1, SOT1040AB2
Toper
operating temperature
[3][5] -40
+70
°C
r.h.stg
relative humidity
-
60
%
Tstg
storage temperature range
[4]
+15
+30
°C
VESD
electrostatic discharge voltage
Human body model
-
± 2kV
antenna bonding
[5]
label converting
[5]



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